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| inchange semiconductor isc product specification isc silicon npn darlington power transistor BU921T description high voltage darlington applications designed for automotive ignition applications and inverter circuits for motor control. absolute maximum ratings (t a =25 ) symbol parameter value unit v ces collector-emitter voltage v be = 0 450 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current 10 a i cm collector current-peak 15 a i b b base current 5 a p c collector power dissipation @t c =25 105 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.2 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor BU921T electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0 400 v v ce (sat)-1 collector-emitter saturation voltage i c = 5a; i b = 50ma b 1.8 v v ce (sat)-2 collector-emitter saturation voltage i c = 7a; i b = 140ma b 1.8 v v be (sat)-1 base-emitter saturation voltage i c = 5a; i b = 50ma b 2.2 v v be (sat)-2 base-emitter saturation voltage i c = 7a; i b = 140ma b 2.5 v i ces collector cutoff current v ce = 450v;v be = 0 v ce = 450v;v be = 0;t j = 125 0.25 0.5 ma i ceo collector cutoff current v ce = 400v; i b = 0 0.25 ma i ebo emitter cutoff current v eb = 5v; i c = 0 50 ma v ecf c-e diode forward voltage i f = 7a 2.5 v isc website www.iscsemi.cn |
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